ts13003hv high voltage npn transistor 1/6 version: e13 to - 92 product summary bv ceo 530v bv cbo 900v i c 1.5a v ce(sat) 0.5v @ i c =0.5a, i b =0.1a features high voltage high speed switching block diagram structure silicon triple diffused type npn silicon transistor ordering information part no. package packing ts13003hvct b0 to-92 1kpcs / bulk ts13003hvct b0g to-92 1kpcs / bulk ts13003hvct a3 to-92 2kpcs / ammo ts13003hvct a3g to-92 2kpcs / ammo note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 530 v emitter-base voltage v ebo 10 v collector current dc i c 1.5 a pulse 3 maximum power dissipation p d 0.5 w p tot 1.96 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 64 o c/w junction to ambient thermal resistance r ? j a 248 o c/w pin definition : 1. emitter 2. collector 3. base
ts13003hv high voltage npn transistor 2/6 version: e13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =1ma, i b =0 bv cbo 900 -- -- v collector-emitter breakdown voltage i c =10ma, i e =0 bv ceo 530 -- -- v emitter-base breakdown voltage i e =1ma, i c =0 bv ebo 9 -- -- v collector cutoff current v cb =800v, i e =0 i cbo -- -- 10 ua emitter cutoff current v eb =10v, i c = 0 i ebo -- -- 0.5 ua collector-emitter saturation voltage i c =0.5a, i b =0.1a i c =1a, i b =0.25a i c =1.5a, i b =0.5a v ce(sat)1 v ce(sat)2 v ce(sat)3 -- -- -- 0.3 0.5 0.9 0.5 1 2 v base-emitter saturation voltage i c =0.5a, i b =0.1a i c =1a, i b =0.25a v be(sat)1 v be(sat)2 -- -- -- -- 1 1.2 v dc current gain v ce =10v, i c =10ma v ce =10v, i c =400ma v ce =10v, i c =1a h fe 15 20 6 -- -- -- 40 40 40 dynamic characteristics frequency v ce =10v, i c =0.1a f t 4 -- -- mhz output capacitance v cb =10v, f =0.1mhz cob -- 21 -- pf resistive load switching time (ratings) delay time v cc =125v, i c =1a, i b1 = i b2 = 0.2a, t p =25us duty cycle 1% t d -- 0.05 0.2 us rise time t r -- 1.1 -- us storage time t stg -- 2 4 us fall time t f -- 0.4 0.7 us note: pulse test: pulse width 300us, duty cycle 2%
ts13003hv high voltage npn transistor 3/6 version: e13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. v ce(sat) v.s. v be(sat figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
ts13003hv high voltage npn transistor 4/6 version: e13 to-92 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts13003hv high voltage npn transistor 5/6 version: e13 to-92 ammo pack mechanical drawing tape dimension item description symbol dimension base of package to lead bend b 3.0 (typ.) component height ha 23.57 (typ.) lead clinch height h0 16.0 0.5 component base height h1 19.0 0.5 component top to lead bend h2 8.0 (max) component alignment (side / side) pd 1.02 (max) component alignment (front / back) hd 0.79 (max) feed hole pitch p0 12.7 0.3 hole center to component center p1 6.25 0.4 lead spread f1 2.5 0.3 lead thickness d 0.46 (typ.) cut lead length l 10.9 (max) taped lead length l1 5.31 (typ.) taped lead thickness t 0.81 0.2 carrier tape thickness t1 0.5 0.2 carrier tape width w 18.0 0.5 hold C down tape width w0 0.5 0.2 hold C down tape position w1 9.0 0.7 feed hole position w2 6.0 0.2 sprocket hole diameter d0 4.0 0.2 lead spring out s 0.1 (max) note: all dimensions are in millimeter.
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